![]() ![]() The BLF188XR is ideal for large-scale industrial, scientific and medical (ISM) applications in frequency ranges under 300 MHz, while the popular BLF578XR series is recommended for frequency ranges up to 500 MHz. With your purchase, we provide a parts list to complete the Amplifier along with technical. These Amplifier Boards include the LDMOS transistors, copper heat spreader and are fully assembled and tested. LDMOS devices are much more potentially unstable at the lower voltages. A key difference with GaN vs LDMOS is that the K-factor at 7V is approximately the same at 14 and 28V. Other key features include stronger integrated ESD protection allowing the BLF188XR to be used in a Class C mode of operation, and several enhancements that make the XR device easy to design in and tune in multiple applications.Īnother interesting feature of the BLF188XR is its excellent linearity, making it a very interesting candidate for high-power linear applications. We currently offer a 3000 watt PEP dual LDMOS Amplifier Board for 749.00 USD and a 1500 watt PEP single LDMOS Amplifier Board for 549.00 USD. The BLF188XR LDMOS transistors used in these RF Pallets are designed primarily for broadband RF power amplifiers with frequencies up to 600 MHz. The most difficult stability point is typically at low V DS for LDMOS and GaN devices, so this point should be checked carefully. The BLF188XR is capable of providing an outstanding 1600 W of peak output power and can operate as high as 60 V, and still pass extreme ruggedness testing. Manufactured with Wolfspeed’s advanced LDMOS process these devices provide excellent thermal performance and. The device is normally used in a push-pull configuration (it's a dual-device part), and the data sheet lists it as a 1.8 to 600 MHz unmatched device. Features include high gain and thermally-enhanced package with slotted and earless flanges. It uses a single 50v LDMOS transistor made by Freescale Semiconductor, the MRFE6VP61K25H. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz. The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. ![]() Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions, capable of withstanding a severe load mismatch with VSWR greater than 65:1 at 5 dB of compression. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. MMICs, pallets and modules in LDMOS as well as GaN technology. ![]() (NASDAQ:NXPI) today introduced the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Ampleon is the leading global partner in RF power offering a broad LDMOS and GaN technology portfolio. Eindhoven, Netherlands and Seattle, Washington, J– NXP Semiconductors N.V. ![]()
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